Effects of Gamma Irradiation on AlGaN-Based High Electron Mobility Transistors
Autor: | Jonathan Lee, Elena Flitsiyan, Joseph Salzman, Leonid Chernyak, Boris Meyler |
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Rok vydání: | 2017 |
Předmět: |
010302 applied physics
Materials science business.industry Transistor 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials law.invention law 0103 physical sciences Optoelectronics 0210 nano-technology business High electron Gamma irradiation |
Zdroj: | ECS Journal of Solid State Science and Technology. 6:S3063-S3066 |
ISSN: | 2162-8777 2162-8769 |
Databáze: | OpenAIRE |
Externí odkaz: |