Improved reliability of NO treated NH3-nitrided oxide with regard to O2 annealing
| Autor: | Satoru Kawazu, Akinobu Teramoto, M.K Mazumder, Hidetoshi Koyama, M. Sekine |
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| Rok vydání: | 1998 |
| Předmět: |
Materials science
Dielectric strength Annealing (metallurgy) Analytical chemistry Oxide Conduction current Time-dependent gate oxide breakdown Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Materials Chemistry Electrical and Electronic Engineering Nitriding |
| Zdroj: | Solid-State Electronics. 42:921-924 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/s0038-1101(98)00108-7 |
| Popis: | NH 3 -nitrided oxide has been annealed in NO or O 2 gas at 1000°C for 1 min and the electrical characteristics, charge trapping and time-dependent dielectric breakdown (TDDB) have been studied. It was observed that in the F–N region before stress the conduction current is the same for all the samples but intrinsic breakdown is earlier for O 2 annealed NH 3 -nitrided oxide. After stress, the leakage current increases abruptly for the O 2 annealed NH 3 -nitrided oxide. The TDDB characteristics have been measured for wet, NO and O 2 annealed NH 3 -nitrided oxide. It was observed that the endurance of wet and NO annealed NH 3 -nitrided oxide is the same, but the O 2 annealed NH 3 -nitrided oxide has a lot of initial failure at the same stress of −11 MV cm −1 . From the experimental results, it can be said that NO annealing not only removes H which comes from the NH 3 nitridation but also improves the oxide reliability by replacing strained Si–O bonds for a stable Si–N bond. |
| Databáze: | OpenAIRE |
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