Properties of photoexcited electrons and holes in undoped GaAs/AlGaAs QWs studied by classical cyclotron resonance
Autor: | M. Kozhevnikov, B.M. Ashkinadze, Arza Ron, E. Cohen, Loren Pfeiffer |
---|---|
Rok vydání: | 1998 |
Předmět: |
Materials science
Condensed matter physics Astrophysics::High Energy Astrophysical Phenomena Cyclotron Cyclotron resonance Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electron localization function law.invention Condensed Matter::Materials Science law General Materials Science Electrical and Electronic Engineering Absorption (electromagnetic radiation) Gaas algaas Quantum well Microwave |
Zdroj: | Superlattices and Microstructures. 23:67-70 |
ISSN: | 0749-6036 |
DOI: | 10.1006/spmi.1996.0292 |
Popis: | We study photoinduced microwave absorption (PMA) at 36 GHz by photogenerated carriers and, in particular, the classical cyclotron resonance (CR) of both electrons and holes in undoped GaAs/AlGaAs QWs. Analyzing the CR lineshape, electron and hole cyclotron masses and their mobilities are obtained. It is found that the electron cyclotron mass ( m cr ) increases with increasing microwave power and with lattice temperature. This is discussed in terms of a decreased electron localization in the spatially fluctuating QW potential. |
Databáze: | OpenAIRE |
Externí odkaz: |