Properties of photoexcited electrons and holes in undoped GaAs/AlGaAs QWs studied by classical cyclotron resonance

Autor: M. Kozhevnikov, B.M. Ashkinadze, Arza Ron, E. Cohen, Loren Pfeiffer
Rok vydání: 1998
Předmět:
Zdroj: Superlattices and Microstructures. 23:67-70
ISSN: 0749-6036
DOI: 10.1006/spmi.1996.0292
Popis: We study photoinduced microwave absorption (PMA) at 36 GHz by photogenerated carriers and, in particular, the classical cyclotron resonance (CR) of both electrons and holes in undoped GaAs/AlGaAs QWs. Analyzing the CR lineshape, electron and hole cyclotron masses and their mobilities are obtained. It is found that the electron cyclotron mass ( m cr ) increases with increasing microwave power and with lattice temperature. This is discussed in terms of a decreased electron localization in the spatially fluctuating QW potential.
Databáze: OpenAIRE