Copper dual damascene integration using organic low k material: construction architecture comparison

Autor:	P. Berruyer, O. Demolliens, C. Verove, M. Fayolle, A. Roman, Y. Trouiller, Yves Morand, Didier Louis, M. Cochet, M. Assous, Gérard Passemard
Rok vydání:	2002
Předmět:	Materials science business.industry Copper interconnect chemistry.chemical_element Capacitance Copper Dual (category theory) chemistry Resist Etching Process integration Trench Electronic engineering Optoelectronics business
Zdroj:	Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407).
DOI:	10.1109/iitc.2000.854332
Popis:	This paper presents three integration schemes of copper with a pure organic low k material (SiLK/sup TM/, Dow Chemical Co., k=2.8). We will compare two trench first architectures, leading to a self or not self aligned structure, with the more conventional self aligned "Via First at Via Level" structure. The limitations of the self aligned structures are discussed by comparison with results obtained with SiO2.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7fa53affc276096488dae46c764f0ba5 https://doi.org/10.1109/iitc.2000.854332 Zobrazit plný text záznamu