The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge0.25 and (100)Si at 400 °C
| Autor: | Minjoo L. Lee, Wee Kiong Choi, Eugene A. Fitzgerald, L. J. Jin, C. H. Tung, D.A. Antoniadis, Kin Leong Pey, Dongzhi Chi, Arthur J. Pitera |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Materials science
Annealing (metallurgy) Metals and Alloys chemistry.chemical_element Heterojunction Surfaces and Interfaces Surfaces Coatings and Films Electronic Optical and Magnetic Materials Germanide Crystallography Nickel symbols.namesake chemistry.chemical_compound chemistry Transition metal Transmission electron microscopy Materials Chemistry symbols Raman spectroscopy Sheet resistance |
| Zdroj: | Thin Solid Films. :151-155 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2004.05.047 |
| Popis: | The reaction of Ni with Ge, Si 0.75 Ge 0.25 and Si using rapid thermal annealing (RTA) and in-situ annealing method at 400°C produces different phases, as revealed by cross-sectional transmission electron microscopy (TEM). A uniform film of nickel germanide (NiGe) was formed at 400°C for the Ni reaction with Ge using the in-situ annealing technique, whereas Ni 3 Ge 2 and NiGe phases were found using the RTA method. For the reaction between Ni and Si, a highly textured NiSi film was obtained at 400°C for RTA whereas Ni 3 Si 2 and NiSi were found using the in-situ annealing method. On the other hand, a relatively uniform NiSiGe was formed using RTA; Ni 3 (Si 1-y Ge y ) 2 and Ni(Si 1-x Ge x ) (x |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect