Analytical modelling of carrier transport mechanisms in long wavelength planar n+–p HgCdTe photovoltaic detectors
| Autor: | Xiaohui Xie, Xiaoning Hu, Vishnu Gopal, Liao Qingjun |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Materials science
Passivation business.industry Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Optoelectronics Mercury cadmium telluride Infrared detector Current (fluid) business Ohmic contact Diode Dark current Voltage |
| Zdroj: | Infrared Physics & Technology. 64:56-61 |
| ISSN: | 1350-4495 |
| Popis: | The dark electrical characteristic of n + on p long wavelength Hg 1 − x Cd x Te photovoltaic detectors has been studied as a function of applied bias voltages. The diodes under study were given different surface treatments prior to their passivation. The dark current components have been identified using the already known carrier transport mechanisms across the junction. It is reported that the diodes under investigation have an excess leakage current component that exhibits quadratic dependence on the applied reverse bias voltage across the diode. The origin of this excess current is found to be closely associated with the ohmic currents. The diodes with higher ohmic current exhibit higher excess leakage current. |
| Databáze: | OpenAIRE |
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