Weak localization and hole-hole interaction effects in silicon-boron delta layers
| Autor: | N. L. Mattey, R. A. Kubiak, Terry E. Whall, Michael J. Kearney |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Condensed matter physics
Silicon Scattering chemistry.chemical_element Condensed Matter Physics Electronic Optical and Magnetic Materials BORO Weak localization chemistry Hall effect Electrical resistivity and conductivity Materials Chemistry Electrical and Electronic Engineering Boron Sheet resistance |
| Zdroj: | Semiconductor Science and Technology. 7:604-607 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/7/4/029 |
| Popis: | Measurements of sheet resistance and Hall coefficient between 0.3 K and 30 K have been used to infer two-dimensional weak localization and hole-hole interaction effects in Si:B delta-doped layers. It is found that the renormalized screening parameter in the interaction theory F* approximately 0.9 for samples of sheet concentrations 1.8*1013 cm-2 to 7.6*1013 cm-2 and is only weakly dependent on carrier concentration, in agreement with theory. The weak localization correction provides evidence for spin-orbit scattering, which appears to become increasingly important as the sheet concentration is increased. |
| Databáze: | OpenAIRE |
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