A Technique for Photoelectric and Photodielectric Effect Measurements at Microwave Frequencies

Autor:	Thomas J. F. Pavlasek, L. Ding, S. Jatar, I. Shih, Clifford H. Champness
Rok vydání:	1983
Předmět:	Materials science Silicon business.industry Attenuation chemistry.chemical_element Germanium Photoelectric effect Wavelength Optics Semiconductor chemistry Optoelectronics Monochromatic color Electrical and Electronic Engineering business Instrumentation Microwave
Zdroj:	IEEE Transactions on Instrumentation and Measurement. 32:326-331
ISSN:	1557-9662 0018-9456
DOI:	10.1109/tim.1983.4315073
Popis:	This paper describes a novel technique, based on the use of a microwave bridge, for the determination of very small changes in the phase and attenuation constants of semiconductor materials. Using this technique, the photoelectric and photodielectric effects in a semiconductor sample under external illumination can be determined. The room-temperature photodielectric effect ???r and the photoelectric effect ???r of silicon and germanium single-crystal samples were measured in the X-band region in the presence of monochromatic illumination in the range from 0.8 to 2.0 , ?m. It was found that the variations of ???r and ???r with respect to the wavelength of the illumination were similar, with a maximum response at about 1.05 ?m for silicon and at 1.75 ?m for germanium.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7f8efdce3c7b39b002c1ca70ab328794 https://doi.org/10.1109/tim.1983.4315073 Zobrazit plný text záznamu