Low-k dielectrics characterization for damascene integration

Autor:	Minghsing Tsai, M. Daniels, Syun-Ming Jang, P.A. Winebarger, L. Lui, Changming Jin, M.S. Liang, Douglas Yu, A. Gonzalez, K.A. Monnig, S. Lin, J. T. Wetzel
Rok vydání:	2001
Předmět:	symbols.namesake Interconnection Materials science Chemical-mechanical planarization symbols Analytical chemistry Copper interconnect Young's modulus Wafer Nanoindentation Blanket Composite material Material properties
Zdroj:	Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461).
DOI:	10.1109/iitc.2001.930042
Popis:	Both CVD and SOD low-k organosilicate dielectrics (2.2
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7f85348a1e830b1a67bd49f0f2ef7a14 https://doi.org/10.1109/iitc.2001.930042 Zobrazit plný text záznamu