Optical Characterization of Si1-xCx/Si ( 0≤x≤0.014) Semiconductor Alloys

Autor:	J. Strane, S. T. Picraux, S. R. Lee, Steven R. Kurtz, Eric D. Jones, C. H. Seager, Thomas M. Mayer, Hosun Lee, J. F. Nelson, J.A. Floro
Rok vydání:	1995
Předmět:	Photoluminescence Materials science Silicon Passivation Alloy Inorganic chemistry General Engineering Analytical chemistry General Physics and Astronomy chemistry.chemical_element engineering.material Epitaxy chemistry Ellipsometry Phase (matter) engineering Direct and indirect band gaps
Zdroj:	Japanese Journal of Applied Physics. 34:L1340
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.34.l1340
Popis:	We have characterized the optical properties of heteroepitexial Si1- x C x /Si (0≤x≤0.014) alloys grown on Si substrates by solid phase epitaxy using spectroscopic ellipsometry and photoluminescence. The measured dielectric function confirms that the samples are of good crystalline quality. The 14-K photoluminescence spectra of Si1- x C x /Si show several defect peaks. After hydrogen passivation, we observed a new peak near 1.15-1.17 eV which increases in energy with the incorporation of carbon. We tentatively assign this peak to the no-phonon peak of the Si1- x C x epi-layer. We discuss the alloy shift of the observed spectroscopic features in terms of the C-induced change in the Si indirect band gap.
Databáze:	OpenAIRE
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