Passivation Films Prepared by Using TiO2-SiO2 Composite Solution
| Autor: | Yoshiba, S., Tanitsu, K., Uzum, A., Dhamrin, M., Suda, Y., Kamisako, K. |
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| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: | |
| DOI: | 10.4229/28theupvsec2013-2dv.3.26 |
| Popis: | 28th European Photovoltaic Solar Energy Conference and Exhibition; 1908-1910 Excellent surface passivation quality is one of the main challenging issues to realize high efficiency crystalline silicon solar cells. Low-cost and simple fabrication processing is desired not only to reduce the total cost of the photovoltaic system but also to simplify the fabrication processes. In this work, novel spin-coatable composite solutions of TiO2 and SiO2 were introduced to realize good passivation and anti-refraction films. The primary results show that such passivation and anti-refraction techniques are very promising alternative process that do not require vacuum or high temperature. The best fabricated surface passivation films have as low surface recombination velocity as 93 cm/s on p-type silicon wafers and 27 cm/s on n-type silicon wafers, respectively. The good passivation effect is considered to be due to the in-situ grown silicon oxide between the interface of the silicon and the fabricated passivation film. |
| Databáze: | OpenAIRE |
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