Structural modification and enhanced field emission on ultrananocrystalline diamond films by nitrogen ion implantation
| Autor: | I-Nan Lin, Umesh Palnitkar, Huan Niu, N.H. Tai, W. F. Pong, Hsiu Fung Cheng, P.T. Joseph |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Annealing (metallurgy) Mechanical Engineering Low dose chemistry.chemical_element Diamond Nanotechnology General Chemistry engineering.material Amorphous phase Nitrogen Electronic Optical and Magnetic Materials Amorphous solid Field electron emission Ion implantation chemistry Chemical engineering Materials Chemistry engineering Electrical and Electronic Engineering |
| Zdroj: | Diamond and Related Materials. 17:1812-1816 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/j.diamond.2008.03.032 |
| Popis: | Nitrogen (N) ion implantation induced modification on structural and electron field emission (EFE) properties of ultrananocrystalline diamond (UNCD) films were reported. Low dose ion implantation slightly improved the EFE properties of UNCD films mainly due to the formation of defects and annealing brought the EFE parameters back to original state by eliminating the defects. Conversely, high dose ion implantation markedly enhanced the EFE properties for UNCD films possibly due to the induction of amorphous carbons for the UNCD films. The annealing process converts the amorphous phase into a more stable graphitic one such that the EFE properties persisted even after the annealing process. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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