Isosbestic Point and Magnetoresistance Components in Ho $$_{0.5}$$ 0.5 Lu $$_{0.5}$$ 0.5 B $$_{12}$$ 12
| Autor: | N. Yu. Shitsevalova, V. Voronov, Karol Flachbart, A. L. Khoroshilov, V. V. Glushkov, S. V. Demishev, V. B. Filippov, V. N. Krasnorussky, A. N. Azarevich, A. V. Bogach, N. E. Sluchanko, Slavomír Gabáni |
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| Rok vydání: | 2016 |
| Předmět: |
Physics
Condensed matter physics Magnetic moment Magnetoresistance Scattering 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Ion Magnetization 0103 physical sciences Antiferromagnetism Spin density wave General Materials Science 010306 general physics 0210 nano-technology Solid solution |
| Zdroj: | Journal of Low Temperature Physics. 185:522-530 |
| ISSN: | 1573-7357 0022-2291 |
| DOI: | 10.1007/s10909-016-1497-9 |
| Popis: | We present the results of precise magnetoresistance (MR) measurements of an antiferromagnetic cage-glass solid solution Ho $$_{0.5}$$ Lu $$_{0.5}$$ B $$_{12}$$ in magnetic fields up to 80 kOe and at temperatures between 1.9 and 100 K. The analysis of results allows to separate the positive and negative contributions to MR. The dominant MR-term was found to be the high field positive contribution $$\Delta \rho /\rho _{(m+)} =\mu _\mathrm{D}^2 H^2$$ which is caused by the drift mobility $$\mu _\mathrm{D} $$ of charge carriers. It was also shown that the negative MR observed at temperatures $$T \le $$ 10 K may be described by the well-known relation between MR and local magnetization $$\Delta \rho /\rho _{(-)} =M_\mathrm{{loc}}^2 $$ obtained by Yosida in the framework of s–d exchange model. We discuss as well the scattering of charge carriers on antiferromagnetic nanosize domains of Ho $$^{3+}$$ ions with effective magnetic moments 3.5–5.5 $$\mu _\mathrm{B}$$ as the mechanism responsible for the appearance of the negative MR component. |
| Databáze: | OpenAIRE |
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