| Autor: |
Dmitry V. Boychenko, A. N. Egorov, Alexander A. Pechenkin, O. B. Mavritskii, Dmitriy V. Savchenkov |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
Optical Sensing and Detection VI. |
| DOI: |
10.1117/12.2555772 |
| Popis: |
Singe event effect (SEE) simulation in modern integrated circuits (ICs) by femtosecond laser irradiation through the substrate allows eliminating a lot of problems connected to the presence of multiple opaque metal layers above the IC active layer. With this irradiation geometry, the proper wavelength of laser radiation should be chosen to generate sufficient amount of nonequilibrium charge in the active layer on the one hand, and to avoid significant laser energy losses in the thick substrate on the other hand. In this paper several typical microelectronic ICs were selected to investigate the dependence of SEE generation effectiveness on the laser wavelength when irradiating through the substrate of various thickness. It was found, that the most appropriate laser wavelength for the silicon substrate thicknesses of 300 to 800 μm lies in the 1030 to 1070 nm range |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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