| Autor: |
Yuqi Wang, W.I. Wang, Malvin C. Teich |
| Rok vydání: |
1992 |
| Předmět: |
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| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| Popis: |
Al0.5Ga0.5Sb/GaSb metal-semiconductor-metal (MSM) detectors have been prepared on semi-insulating InP substrates. The molecular beam epitaxially grown samples on differently orientated substrates exhibit different types of conductivity. The Schottky barrier height between Al and Al0.5Ga0.5Sb grown on (311)B oriented substrates is 0.6 eV, while the Al contacts on (100) sample exhibit ohmic behavior. The results show that the Sb- deficiency related p-type native defect density is significantly reduced in the samples grown on (311)B oriented substrates. The 3-dB device response bandwidth is about 1 GHz at room temperature and beyond 10 GHz at 77 K.© (1992) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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