| Autor: |
Se Ahn Song, Youn Joong Kim, Alexander V. Latyshev, Anton K. Gutakovskii, Young-Min Kim, Hionsuck Baik, Liudmila I. Fedina |
| Rok vydání: |
2007 |
| Předmět: |
|
| Zdroj: |
Advanced Materials Research. :1195-1198 |
| ISSN: |
1662-8985 |
| DOI: |
10.4028/www.scientific.net/amr.26-28.1195 |
| Popis: |
Transformation of uniformly strained GexSi1-x layers into GeSi dots of 3 ~ 7 nm which are compositionally ordered by one or concurrently two sets of {111} planes was carried out for the first time under non-equilibrium conditions induced by 1.25 MeV electron irradiation at Tc ≥ 200 oC in the high voltage electron microscope (JEM-ARM1300S). This microscope installed in the KBSI is characterized by an excellent point-to-point resolution of 0.12 nm allowing obtaining detailed information on chemical ordering at specific parameters of defocus (-800 Å) and crystal thickness (200~250 Å) determined by extensive HRTEM image simulation for the ordered dots. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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