| Autor: |
M.R. Leys, C. A. Verschuren, H Vonk, T. Marschner, JH Joachim Wolter |
| Rok vydání: |
1998 |
| Předmět: |
|
| Zdroj: |
Journal of Crystal Growth. 188:11-16 |
| ISSN: |
0022-0248 |
| DOI: |
10.1016/s0022-0248(98)00045-1 |
| Popis: |
The growth rate and the diffusion length are crucial parameters from the viewpoint of both growth kinetics and applications, notably in the emerging field of selective area epitaxy. We have found that the vertical (1 0 0) growth rate of InP grown by CBE depends not only on group III flux and temperature, but also on the substrate misorientation angle. It decreases by a few percent for lower misorientations and the effect becomes more pronounced at higher temperatures. This is due to an increased probability for desorption of the group III adatoms. To quantitatively describe this growth rate dependence we developed a model based on classical crystal growth theories for step flow (BCF) and 2D nucleation. Using only two free parameters. we obtain an excellent fit to the experimental data. We find a value of E d - E s of 0.47 ± 0.01 eV, corresponding to a diffusion length of 13 nm at 515 C. and. for the first time, the energy barrier for the formation of a critical 2D nucleus. ΔG * , with values between 52 and 34 meV for growth rates from 0.3 to 0.6 μm. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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