High Temperature Performance of Normally-off SiC JFET's Compared to Competing Approaches
| Autor: | V. Bondarenko, Robin L. Kelley, David C. Sheridan, Andrew P. Ritenour, Jeffrey B. Casady |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Materials science
Silicon business.industry Bipolar junction transistor Electrical engineering JFET chemistry.chemical_element Insulated-gate bipolar transistor chemistry.chemical_compound chemistry MOSFET Silicon carbide Optoelectronics Pharmacology (medical) Power semiconductor device Field-effect transistor business |
| Zdroj: | Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2010:000152-000159 |
| ISSN: | 2380-4491 |
| DOI: | 10.4071/hitec-jcasady-tp23 |
| Popis: | Normally-off Silicon Carbide (SiC) power Junction Field Effect Transistors (JFETs) were compared with competing power transistor technology at temperatures from 25 °C to 150 °C as limited by the packaging. Switching energies were measured from 1200 V, 125 mΩ and 50 mΩ (room temperature) rated SiC power JFETs and compared with 900 V silicon (Si) super-junction Metal Oxide Semiconductors (MOSFETs) and 1200 V Si Insulated Gate Bipolar Transistors (IGBTs). For both comparisons, measured performance for the SiC power JFET was advantageous at all temperatures when switching at 50 kHz, including a total switching energy (ESW) of 97 μJ for the SiC JFET, compared with 158 μJ for the Si super-junction MOSFET, and 550 μJ for the Si IGBT at 25 °C. At 150°C, the ESW was 138 μJ for the SiC power JFET, 413 μJ for the Si super-junction MOSFET, and 1020 μJ for the Si IGBT. Increasing the die size of the 1200 V, normally-off SiC JFET by 2.25 resulted in an measured increase in switching energy of 2.7 and 2.37 at 25 °C and 150 °C, respectively, a quasi-linear relationship. Higher power preview products of the SiC normally-off JFET technology were also examined including a 1200 V, 25 mΩ (room-temperature rating) power JFET characterized up to 250 °C, and a module capable of 1200 V, 120 A DC performance at 25 °C. |
| Databáze: | OpenAIRE |
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