Electronic structure and the metal-semiconductor transition inBaPb1−xBixO3studied by photoemission and x-ray-absorption spectroscopy

Autor:	F. M. F. de Groot, H. Takagi, S. Uchida, Hirofumi Namatame, J. C. Fuggle, A. Fujimori
Rok vydání:	1993
Předmět:	X-ray absorption spectroscopy Materials science Condensed matter physics Absorption spectroscopy Photoemission spectroscopy Band gap Energy level splitting Cuprate Electronic structure Spectroscopy
Zdroj:	Physical Review B. 48:16917-16925
ISSN:	1095-3795 0163-1829
Popis:	We have studied the electronic structure of BaPb 1-x Bi x O 3 and its changes across the composition-dependent metal-semiconductor transition using photoemission and O 1s x-ray-absorption spectroscopy. For the parent insulator BaBiO 3 , the peak-to-peak splitting of the Bi 6s band is found to be large, whereas, the minimum gap is much smaller, qualitatively consistent with the large (∼2 eV) optical gap of the direct type and the smaller (∼0.5 eV) transport gap of indirect type. Pb substitution for Bi induces new states of Pb 6s character outside the band gap of BaBiO 3 and does not induce in-gap spectral weight unlike in cuprate superconductors; the splitting of the Bi 6s band is not significantly reduced by Pb substitution throughout the semiconducting region
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7f5ae3f3ddadca9059f201e43065fb8f https://doi.org/10.1103/physrevb.48.16917 Zobrazit plný text záznamu