A NAN-like model for the growth and steady state magnitude of photoluminescence and carrier population in amorphous semiconductors at low temperatures
| Autor: | T.M. Searle |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Amorphous semiconductors
education.field_of_study Photoluminescence Condensed matter physics Chemistry Population Magnitude (mathematics) Condensed Matter Physics Electronic Optical and Magnetic Materials Materials Chemistry Ceramics and Composites Steady state (chemistry) education Quantum tunnelling |
| Zdroj: | Journal of Non-Crystalline Solids. :611-614 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/0022-3093(93)90626-9 |
| Popis: | A simple model for the growth of photoluminescence PL and carrier population N p in a system where the photogenerated carriers are localised and recombine by tunnelling is described. It does successfully qualitatively describes the difference in risetimes between PL and N p , and produces an intensity dependent steady state value of N p , but does not lend support to the suggestion that N p ∝t 1/2 . |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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