Ultrathin (Bi1–xSbx)2Se3 Field Effect Transistor with Large ON/OFF Ratio
| Autor: | Jung-Chun Andrew Huang, Yi Chang Li, Hsieh Cheng Han, Huaili Qiu, Zhongjun Li, Chuan-Pu Liu, Cheong Wei Chong, Yu Hung Liu, Chun Ming FanChiang |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Condensed matter physics business.industry Transistor Field effect 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Gate voltage 01 natural sciences law.invention law Topological insulator Electric field 0103 physical sciences Optoelectronics General Materials Science Field-effect transistor 010306 general physics 0210 nano-technology business Spin-½ |
| Zdroj: | ACS Applied Materials & Interfaces. 9:12859-12864 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.7b00541 |
| Popis: | Ultrathin three-dimensional topological insulator films are promising for use in field effect devices. (Bi1–xSbx)2Se3 ultrathin films were fabricated on SrTiO3 substrate, where large resistance changes of ∼25 000% could be achieved using the back gate voltage. We suggest that the large ON/OFF ratio was caused by the combined effect of Sb-doping and the reduction of film thickness down to the ultrathin regime. The crossover of different quantum transport under an electric field may form the basis for topological insulators (TI)-based spin transistors with large ON/OFF ratios in the future. |
| Databáze: | OpenAIRE |
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