1200V GaN Switches on Sapphire Substrate

Autor:	G. Gupta, M. Kanamura, B. Swenson, D. Bisi, B. Romanczyk, C. Neufeld, S. Wienecke, T. Ogino, Y. Miyazaki, K. Imanishi, J. Ikeda, M. Kamiyama, J. Guerrero, M. Labrecque, R. Prejdova, B. Cruse, J. McKay, G. Bolante, Z. Wang, T. Hosoda, Y. Wu, P. Parikh, R. Lal, U. Mishra
Rok vydání:	2022
Zdroj:	2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7f4fb95f724103622f75c1b76c91e572 https://doi.org/10.1109/ispsd49238.2022.9813640 Zobrazit plný text záznamu