Scaling of Hydrogen-Terminated Diamond FETs to Sub-100-nm Gate Dimensions
| Autor: | Stephen A. O. Russell, Oliver J. L. Fox, Paul W May, David A. J. Moran, Helen McLelland |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Diamond-like carbon business.industry Transconductance Transistor Diamond Nanotechnology engineering.material Electronic Optical and Magnetic Materials Ion law.invention law Logic gate engineering Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Ohmic contact |
| Zdroj: | IEEE Electron Device Letters. 32:599-601 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2011.2114871 |
| Popis: | We present the dc operation of hydrogen-terminated diamond field-effect transistors (FETs) with gate lengths of 1 μm to 50 nm. The 50-nm device metrics include a maximum drain current of 290 mA/mm and a peak extrinsic transconductance of 95 mS/mm. As the device gate length is reduced, peak intrinsic transconductance is increased substantially to a value of 650 mS/mm for the 50-nm device. A minimum Ion/Ioff ratio of ~ 1.5 × 104 is maintained at this reduced gate dimension. These results appear highly promising for the improvement of hydrogen-terminated diamond FET high-frequency performance through reduction of the device gate length to sub-100-nm dimensions. |
| Databáze: | OpenAIRE |
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