MOVPE Grown Gallium Phosphide–Silicon Heterojunction Solar Cells
| Autor: | David Lackner, Jens Ohlmann, Andreas Beyer, Stefan Janz, Thomas Rachow, Jürgen Belz, Frank Dimroth, Jan Benick, Kerstin Volz, Martin Hermle, Markus Feifel |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Heterojunction bipolar transistor chemistry.chemical_element 02 engineering and technology Quantum dot solar cell 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Copper indium gallium selenide solar cells Polymer solar cell Electronic Optical and Magnetic Materials Gallium arsenide Monocrystalline silicon chemistry.chemical_compound chemistry 0103 physical sciences Gallium phosphide Optoelectronics Electrical and Electronic Engineering Gallium 0210 nano-technology business |
| Zdroj: | IEEE Journal of Photovoltaics. 7:502-507 |
| ISSN: | 2156-3403 2156-3381 |
| DOI: | 10.1109/jphotov.2016.2642645 |
| Popis: | Gallium phosphide (GaP) is, in theory, a near-ideal heteroemitter for silicon solar cells due to its electronic and crystal properties. In this paper, we present n-type gallium phosphide on p-type silicon heterojunction solar cells which have been prepared by direct growth via metal–organic vapor phase epitaxy (MOVPE). The devices show very promising results in quantum efficiency and current density. However, the open-circuit voltage of 560 mV is far from ideal. The investigation of two different nucleation processes reveals a significant influence of the antiphase domain density at the GaP/Si interface on the open-circuit voltage. |
| Databáze: | OpenAIRE |
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