Uhv-Mocvd Growth and in Situ Characterization of Epitaxial TiO2 Films

Autor: Samuel Chen, Thomas N. Blanton, Wayne L. Gladfelter, John F. Evans, Gustavo R. Paz-Pujalt, K. M. Chen, C. P. Fictorie, T. Castro, Philip I. Cohen, Alfonso Franciosi, Henry J. Gysling
Rok vydání: 1992
Předmět:
Zdroj: MRS Proceedings. 280
ISSN: 1946-4274
0272-9172
Popis: Thin films of TiO2 were grown on SrTiO3 and Al2O3 using Ti(OC3H7)4 in the absence of any external oxygen source such as H2O or O2. On SrTiO3 (001), epitaxial anatase (001) formed even at temperatures (800 °C) above the anatase to rutile phase transition temperature. In situ reflection high energy electron diffraction (RHEED) was used to monitor structural evolution during growth, and the films were further characterized by Auger electron spectroscopy (AES), transmission electron microscopy (TEM), and x-ray diffraction. Reaction kinetics were monitored using mass spectrometry, and these results, combined with temperature-programmed reaction spectroscopy, gave some insight into the deposition process.
Databáze: OpenAIRE
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