Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes
| Autor: | Dong-Yu Kim, Tae Yeon Seong, Seok Kim, Yu-Sun Park, June O. Song, Takhee Lee, Hyun Gi Hong, C. Sone, Jaehee Cho |
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| Rok vydání: | 2006 |
| Předmět: |
Nanostructure
Materials science business.industry Indium tin oxide electrodes Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Indium tin oxide Optics Semiconductor law Electrode Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Science technology and society Light-emitting diode Diode |
| Zdroj: | Semiconductor Science and Technology. 21:594-597 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/21/5/004 |
| Popis: | We report on the enhancement of the light output of near-UV (298 nm) GaN-based light-emitting diodes (LEDs) by using nanopatterned indium tin oxide (ITO) p-type contact layers. One-dimensional (1D) and two-dimensional (2D) nanopatterns are defined using a TiO2 nano-mask, fabricated by means of a surface relief grating technique. The LEDs fabricated with the 1D and 2D nanopatterned p-type electrodes produce higher output powers by 33–48% (at 20 mA) as compared to those fabricated with the unpatterned contacts. The pattern-induced improvement of the output power is described in terms of the formation of the sidewalls of p-type electrodes. |
| Databáze: | OpenAIRE |
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