Extended defects generated in the slip plane by moving dislocation in diamond lattice crystals: morphology and properties

Autor:	V. Eremenko, Jacques Rabier, J. L. Demenet
Rok vydání:	2009
Předmět:	Dislocation creep Crystallography Materials science Condensed matter physics Silicon chemistry Lattice (order) Semiconductor materials chemistry.chemical_element Electron Diamond cubic Dislocation Condensed Matter Physics
Zdroj:	physica status solidi c. 6:1801-1806
ISSN:	1610-1642 1862-6351
Popis:	An analysis of the morphology of the extended defects revealed behind dislocation in the slip plane of silicon is presented. These extended defects show an electrical activity contradictorily to dislocations themselves; this is confirmed by Electron Induced Surface Potential (EISP) measurements. It is shown, that the generation of these extended defects is a common phenomenon for diamond lattice materials. The defects generation which has to be elucidated is considered to be relevant to a dynamical dislocation core structure during the plastic deformation of semiconductor materials with covalent lattice. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7f431473716375c05b871405cf76df22 https://doi.org/10.1002/pssc.200881464 Zobrazit plný text záznamu Plný text