Atomic Processes in the Formation of Strained Ge Layers on Si(111) and (001) Substrates Within the Stransky–Krastanov Growth Mechanism
| Autor: | S.A. Teys |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Nucleation 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention Decreased density Crystallography law Chemical physics 0103 physical sciences Redistribution (chemistry) Wetting Scanning tunneling microscope 010306 general physics 0210 nano-technology Wetting layer Molecular beam epitaxy |
| Popis: | Structural and morphological features of the formation of the wetting layer and the start of three-dimensional growth of Ge on Si(111) and (001) surfaces under quasi-equilibrium growth conditions were studied by means of scanning tunneling microscopy. The principal differences and general trends of atomic processes involved in the formation of wetting layers on substrates with different orientations were demonstrated. The growth of Ge is accompanied by the redistribution of Ge atoms and partial strain relaxation due to the formation of new surfaces, vacancies, and surface structures of decreased density. Analysis of the sites nucleation of three-dimensional Ge islands after the formation of the wetting layer was carried out. The transition to three-dimensional growth at the Si(001) surface was determined by the nucleation of single {105} facets on the rough Ge(100) surface. |
| Databáze: | OpenAIRE |
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