Copper oxide thin‐film growth using an oxygen plasma source

Autor:	M. Touzeau, P. Luzeau, M. Nanot, D. Pagnon, J. P. Contour, N. Hess, X. Z. Xu, Michel Laguës, F. Queyroux
Rok vydání:	1990
Předmět:	inorganic chemicals Copper oxide Analytical chemistry Oxide chemistry.chemical_element Surfaces and Interfaces Substrate (electronics) Condensed Matter Physics Copper Oxygen Surfaces Coatings and Films chemistry.chemical_compound chemistry Vacuum deposition Torr Thin film
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:3938-3940
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.576425
Popis:	We present measurements of the oxidation level (Cu+ and Cu2+ concentration) of copper thin films deposited using a new type of oxygen plasma source. This oxygen plasma source is operated under ultrahigh vacuum, and allows one to oxidize copper up to nearly pure Cu2+ oxide at rather low temperature (
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7f37d0bc422310840c9b4c30f7a1b1f6 https://doi.org/10.1116/1.576425 Zobrazit plný text záznamu