Transverse magnetoresistance and Hall effect in wide‐gap, p‐type Hg1−xMnxTe

Autor: J. R. Anderson, D. R. Stone, W. B. Johnson
Rok vydání: 1983
Předmět:
Zdroj: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 1:1761-1764
ISSN: 1520-8559
0734-2101
DOI: 10.1116/1.572211
Popis: A low frequency ac measuring‐current technique has been used to investigate the magnetoresistance and Hall effect in Hg1−xMnxTe over a temperature range from 2 to 300 K. The exchange interaction between the Mn++ ions and the band carriers causes the energy bands to be significantly modified in the presence of a magnetic field. As a result magnetic boil‐off and magnetic‐field‐enhanced hopping have been observed in p‐type semiconducting samples. These effects produce a large decrease of resistance with increasing magnetic field at low temperatures.
Databáze: OpenAIRE