Transverse magnetoresistance and Hall effect in wide‐gap, p‐type Hg1−xMnxTe
Autor: | J. R. Anderson, D. R. Stone, W. B. Johnson |
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Rok vydání: | 1983 |
Předmět: | |
Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 1:1761-1764 |
ISSN: | 1520-8559 0734-2101 |
DOI: | 10.1116/1.572211 |
Popis: | A low frequency ac measuring‐current technique has been used to investigate the magnetoresistance and Hall effect in Hg1−xMnxTe over a temperature range from 2 to 300 K. The exchange interaction between the Mn++ ions and the band carriers causes the energy bands to be significantly modified in the presence of a magnetic field. As a result magnetic boil‐off and magnetic‐field‐enhanced hopping have been observed in p‐type semiconducting samples. These effects produce a large decrease of resistance with increasing magnetic field at low temperatures. |
Databáze: | OpenAIRE |
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