Limiting pump intensity for sulfur-doped gallium selenide crystals

Autor:	A. V. Shaiduko, Valerii A Svetlichnyi, A. I. Potekaev, Grigory V. Lanskii, Jin Guo, Dianjun Li, Konstantin A. Kokh, Zhi-Shu Feng, Yu. M. Andreev, Jijiang Xie, Lei Zhang
Rok vydání:	2014
Předmět:	Materials science Physics and Astronomy (miscellaneous) Opacity business.industry Doping chemistry.chemical_element Electromagnetic radiation Sulfur Crystal Optics chemistry Electrical resistivity and conductivity Optoelectronics Irradiation Gallium business Instrumentation
Zdroj:	Laser Physics Letters. 11:055401
ISSN:	1612-202X 1612-2011
DOI:	10.1088/1612-2011/11/5/055401
Popis:	High optical quality undoped and sulfur-doped gallium selenide crystals were grown from melts by the modified vertical Bridgman method. Detailed study of the damage produced under femtosecond pulse exposure has shown that evaluation of the damage threshold by visual control is unfounded. Black matter spots produced on crystal surfaces do not noticeably decrease either its transparency or its frequency conversion efficiency as opposed to real damage identified as caked well-cohesive gallium structures. For the first time it was demonstrated that optimally sulfur-doped gallium selenide crystal possesses the highest resistivity to optical emission (about four times higher in comparison with undoped gallium selenide).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7f34815764499ab37c204a72e7b4039f https://doi.org/10.1088/1612-2011/11/5/055401 Zobrazit plný text záznamu