Defect structure of a free standing GaN wafer grown by the ammonothermal method

Autor:	Sami Suihkonen, Turkka O. Tuomi, Harri Lipsanen, Tadao Hashimoto, Sakari Sintonen, Sierra Hoff, Edward Letts, Henri Jussila
Rok vydání:	2014
Předmět:	Diffraction Materials science business.industry Synchrotron radiation Nitride Condensed Matter Physics Inorganic Chemistry Crystal Crystallography X-ray crystallography Materials Chemistry Optoelectronics Wafer Dislocation business Beam (structure)
Zdroj:	Journal of Crystal Growth. 406:72-77
ISSN:	0022-0248
Popis:	White beam synchrotron radiation X-ray topography (SR-XRT) and X-ray diffraction (XRD) measurements were used to non-destructively study the defect structure of a bulk GaN wafer, grown by the ammonothermal method. SR-XRT topographs revealed high crystal quality with threading dislocation density 8.8×10 4 cm −2 and granular structure consisting of large, slightly misaligned grains. The threading dislocations within grains were identified as mixed and screw type, while no pure threading edge dislocations were observed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7f324d7a6fefb37690fbd459ca250e38 https://doi.org/10.1016/j.jcrysgro.2014.08.022 Zobrazit plný text záznamu Full Text from ScienceDirect