Structure and interface-controlled growth kinetics of ZnAl2O4 formed at the (112̄0) ZnO/(011̄2) Al2O3 interface
| Autor: | C. R. Gorla, S. Liang, William E. Mayo, Yicheng Lu |
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| Rok vydání: | 2000 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 87:3736-3743 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.372454 |
| Popis: | The solid state reaction between metalorganic chemical vapor deposition grown epitaxial ZnO films and the R-plane sapphire substrate after annealing at 1000 °C for various times in an O2/N2 atmosphere was studied in detail. Multiple epitaxial relationships between the reaction product (ZnAl2O4) and the reactants were observed, as determined by cross-sectional transmission electron microscopy. In the dominant epitaxial relationship (A1), the (220) plane of ZnAl2O4 was parallel to the (1101) plane of Al2O3. A twin (A2) of orientation A1, i.e. (220) ZnAl2O4//(1011) Al2O3, and a closely related orientation (B) wherein the (220) ZnAl2O4 plane is parallel to the (1210) ZnO plane (which is equivalent to a 5° clockwise rotation about the [112] ZnAl2O4 or [0001] ZnO zone axis relative to A2), were also observed. Enhanced growth was observed at grain boundaries. It was necessary to measure the spinel growth rate from grains with the same orientation far away from grain boundaries because the growth rate wa... |
| Databáze: | OpenAIRE |
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