An analytical 3D model for short-channel effects in undoped FinFETs
| Autor: | Benjamin Iniguez, Valeria Kilchytska, Denis Flandre, Yehea Ismail, Hamdy Abd El Hamid |
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| Rok vydání: | 2015 |
| Předmět: |
Physics
Reverse short-channel effect Charge density Drain-induced barrier lowering Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Poisson distribution Thermal conduction Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Computational physics Threshold voltage symbols.namesake Modeling and Simulation symbols Electrical and Electronic Engineering Poisson's equation Communication channel |
| Zdroj: | Journal of Computational Electronics. 14:500-505 |
| ISSN: | 1572-8137 1569-8025 |
| DOI: | 10.1007/s10825-015-0678-0 |
| Popis: | An analytical and scalable model for the threshold voltage in FinFETs has been developed by solving the 3-D Poisson equation using appropriate techniques. The model is also based on a physical analysis of the conduction path. The mobile charge term was considered in the 3-D Poisson's equation to be solved. The threshold voltage is defined as the gate voltage to obtain a certain threshold charge density. Due to its 3-D basis, the model inherently accounts for short-channel effects, such as the threshold voltage roll-off and the Drain Induced Barrier Lowering effect. A very good agreement with 3-D numerical simulations has been observed. |
| Databáze: | OpenAIRE |
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