High-quality GaAs grown on aluminum film
| Autor: | Chu-Chun Wu, Yen-Ting Fan, Chia-Chu Cheng, Sheng-Di Lin |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Diffraction Materials science Photoluminescence Condensed Matter::Other business.industry Physics::Optics chemistry.chemical_element 02 engineering and technology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology 01 natural sciences Condensed Matter::Materials Science Quality (physics) chemistry Transmission electron microscopy Quantum dot Aluminium 0103 physical sciences Optoelectronics 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | Conference on Lasers and Electro-Optics. |
| DOI: | 10.1364/cleo_si.2017.sth3i.8 |
| Popis: | We have grown GaAs layers on an aluminum nanofilm by using molecular beam epitaxy. Defect-free GaAs and InAs quantum dots are investigated with X-ray diffraction, transmission electron microscopy, and room-temperature photoluminescence. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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