High performance fully passivated InAlAs/InGaAs/InP HFET

Autor:	Jurgen Dickmann, H. Nickel, H. Daembkes, A. Geyer, R. Lösch, H. Haspeklo
Rok vydání:	1992
Předmět:	Materials science Passivation business.industry Transconductance Electrical engineering Cutoff frequency Gallium arsenide chemistry.chemical_compound Semiconductor chemistry Saturation current Optoelectronics Breakdown voltage Field-effect transistor Electrical and Electronic Engineering business
Zdroj:	Electronics Letters. 28:647
ISSN:	0013-5194
DOI:	10.1049/el:19920409
Popis:	The fabrication of fully Si3N4passivated lattice matched InAlAs/InGaAs/InP HFETs is reported. The DC IV characteristics of 0.25μm gate length multigate finger devices show no kink or loop effects indicating excellent material quality. The drain to source breakdown voltage is in excess of VDB > 5V. From the DC device characterisation a maximum saturation current of 490 mAmm and a maximum transconductance of 500mSmm have been measured. A maximum current gain cutoff frequency of fT = 100 GHZ and a maximum unilateral gain cutoff frequency as high as fmax = 280 GHz have been achieved.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7f12af9ed1f79e57cfe8ce868b626d38 https://doi.org/10.1049/el:19920409 Zobrazit plný text záznamu