| Autor: | P. Hansen, Detlev Dr Hennings, Herbert Schreinemacher |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Materials science
Dopant Annealing (metallurgy) Doping Analytical chemistry chemistry.chemical_element Dielectric Partial pressure Condensed Matter Physics Acceptor Oxygen Electronic Optical and Magnetic Materials chemistry Mechanics of Materials Materials Chemistry Ceramics and Composites Curie temperature Electrical and Electronic Engineering |
| Zdroj: | Journal of Electroceramics. 2:85-94 |
| ISSN: | 1385-3449 |
| DOI: | 10.1023/a:1009922906146 |
| Popis: | The dielectric properties of (Ba,Ca)(Ti,Zr)O3 ceramics containing various acceptor and donor dopants on the B sites have been studied. Formation of charge compensating “complexes” between acceptors, donors and oxygen vacancies has been observed. All acceptors cause a reduction of the Curie point. The maximum dielectric constant increases with the average grain size almost independent of the acceptor incorporated. Ceramics fired in reducive atmospheres reveal pronounced changes of the dielectric properties after annealing in oxidizing atmosphere. In particular the losses and the maximum dielectric constants are significantly affected by the annealing time, temperature and partial pressure of oxygen. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink