CMOS-Integrated Single-Photon-Counting X-Ray Detector using an Amorphous-Selenium Photoconductor with $11\times 11-\boldsymbol{\mu}\mathbf{m}^{2}$ Pixels
| Autor: | Reza Mohammadi, Ahmet Camlica, Karim S. Karim, Abdallah El-Falou, Peter M. Levine |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Pixel Physics::Instrumentation and Detectors business.industry Pixel geometry Detector X-ray detector 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Photon counting Condensed Matter::Materials Science Readout integrated circuit CMOS 0103 physical sciences Optoelectronics Charge carrier 0210 nano-technology business |
| Zdroj: | 2018 IEEE International Electron Devices Meeting (IEDM). |
| DOI: | 10.1109/iedm.2018.8614645 |
| Popis: | We report, for the first time, results from a single-photon-counting X-ray detector monolithically integrated with an amorphous semiconductor. Our prototype detector combines amorphous selenium (a-Se), a well-known X-ray photoconductive material suitable for large-area applications, with a $0.18-\mu \mathrm{m}$ -CMOS readout integrated circuit containing two $26\times 196$ photon counting pixel arrays. The detector features $11\times 11-\mu \mathrm{m}^{2}$ pixels to overcome a-Se count-rate limitations by unipolar charge sensing of the faster charge carriers (holes) via a unique pixel geometry that leverages the small pixel effect for the first time in an amorphous semiconductor. Measured results from a mono-energetic radioactive source are presented and demonstrate the untapped potential of using amorphous semiconductors for high-spatial-resolution photon-counting X-ray imaging applications. |
| Databáze: | OpenAIRE |
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