Self-biased transconductance amplifier
| Autor: | Yves Blanchard, George Alquie, Guo Neng Lu, Anne Exertier, Gilles Amendola, Serge Spirkovitch |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Engineering
Power-added efficiency FET amplifier business.industry Electrical engineering Common source Hardware_PERFORMANCEANDRELIABILITY Fully differential amplifier law.invention Hardware_GENERAL law Operational transconductance amplifier Hardware_INTEGRATEDCIRCUITS Operational amplifier Linear amplifier business Direct-coupled amplifier |
| Zdroj: | SPIE Proceedings. |
| ISSN: | 0277-786X |
| DOI: | 10.1117/12.364455 |
| Popis: | A CMOS, self-biased transconductance amplifier has been designed to be associated and integrated with a silicon capacitive microphone. To meet requirements especially on gain sensitivity, power consumption, and minimization of parasite capacitance effect, we have proposed a cascode structure with the cascode transistor source used as signa input. Switched-capacitor techniques have been applied for realizing self-bias for the amplifier and ensuring its high- gain operation. The proposed amplifier has been designed and fabricated in a 0.8 micrometers CMOS process. It has a surface area of 210 micrometers by 170 micrometers . Experimental results obtained from measuring the fabricated chip show a high-gain sensitivity and a low power dissipation for the amplifier. Results of simulations and measurements have been discussed.© (1999) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|