Correlated high-resolution x-ray diffraction, photoluminescence, and atom probe tomography analysis of continuous and discontinuous InxGa1−xN quantum wells

Autor:	Xiaochen Ren, Lincoln J. Lauhon, Daniel D. Koleske, James R. Riley
Rok vydání:	2015
Předmět:	Diffraction Photoluminescence Physics and Astronomy (miscellaneous) chemistry.chemical_element Atom probe Spectral line law.invention chemistry law Spontaneous emission Emission spectrum Atomic physics Indium Quantum well
Zdroj:	Applied Physics Letters. 107:022107
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.4926808
Popis:	Atom probe tomography (APT) is used to characterize the influence of hydrogen dosing during GaN barrier growth on the indium distribution of InxGa1−xN quantum wells, and correlated micro-photoluminescence is used to measure changes in the emission spectrum and efficiency. Relative to the control growth, hydrogen dosing leads to a 50% increase in emission intensity arising from discontinuous quantum wells that are narrower, of lower indium content, and with more abrupt interfaces. Simulations of carrier distributions based on APT composition profiles indicate that the greater carrier confinement leads to an increased radiative recombination rate. Furthermore, APT analysis of quantum well profiles enables refinement of x-ray diffraction analysis for more accurate nondestructive measurements of composition.
Databáze:	OpenAIRE
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