| Popis: |
16.5% total area efficiency on a monolithic 1.09m2 module sets a new record, increased from the previous 15.7%, for commercial-size CIGS-based modules. The film property optimization on the absorber, buffer, and window layers, and in addition, the dead area reduction resulted in the improvement in VocxJsc and FF. More Ga incorporated into the absorber layer enhanced bandgap and back surface field, to improve VocxJsc. CdS buffer layer is enhanced by better crystallinity and carrier concentration. ZnO window layer with higher mobility and less resistivity induced lower series resistance. In addition, module redesign with reduce dead area generated more power from the modules. This champion CIGS module is made from TSMC Solar production line located in Taichung Taiwan, consistently produces production exceed 15% module efficiency. |
