Monolithic In0.83Ga0.17As Multiple Quantum Well Light- Emitting Diodes using InAsPSb Wide Bandgap Barrier
| Autor: | Suho Park, Phuc Dinh Nguyen, Minkyeong Kim, Jiyeon Jeon, Yeongho Kim, Sang Jun Lee |
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| Rok vydání: | 2022 |
| Zdroj: | Optica Advanced Photonics Congress 2022. |
| DOI: | 10.1364/assl.2022.jtu6a.1 |
| Popis: | Monolithic InGaAs/InAsPSb MQW LEDs have been demonstrated. The eSWIR light sources are fully strain-relaxed on the InAs x P1- x metamorphic virtual substrate. The novel InAsPSb barrier can successfully enhance the confinement of the electrons in QWs. |
| Databáze: | OpenAIRE |
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