High performance, low complexity vertical PNP BJT integrated in a 0.18μm SiGe BiCMOS technology

Autor:	A.D. Strieker, Natalie B. Feilchenfeld, Benjamin T. Voegeli, K. Watson, J. Dunn, J. Rascoe, K. Newton, Peter B. Gray, S. St Onge, Nicholas Theodore Schmidt, B.A. Rainey
Rok vydání:	2005
Předmět:	Low complexity Materials science business.industry Heterostructure-emitter bipolar transistor Heterojunction bipolar transistor Bipolar junction transistor Electrical engineering Optoelectronics Bicmos integrated circuits BiCMOS Microwave bipolar transistors business Bicmos technology
Zdroj:	Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005..
Popis:	An isolated vertical PNP BJT with f/sub T/ and f/sub MAX/ of 20GHz available as a modular component in a 0.18/spl mu/m SiGe BiCMOS technology is described. The VPNP device is fabricated using a low complexity integration scheme and is optimized to complement the high breakdown SiGe NPN HBT.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7ee83a09e685937bd00184da8ab4b2dc https://doi.org/10.1109/bipol.2005.1555218 Zobrazit plný text záznamu