Benefit of NMOS by Compressive SiN as Stress Memorization Technique and Its Mechanism
| Autor: | Tsung-Yu Chiang, Chia-Chun Liao, Min-Chen Lin, Tien-Sheng Chao |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Materials science
Fabrication Electronic Optical and Magnetic Materials Silicon-germanium Stress (mechanics) chemistry.chemical_compound Compressive strength Silicon nitride chemistry Ultimate tensile strength Electronic engineering Electrical and Electronic Engineering Composite material Layer (electronics) NMOS logic |
| Zdroj: | IEEE Electron Device Letters. 31:281-283 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2010.2041524 |
| Popis: | In this letter, we certify that the compressive SiN capping layer has more potential than the tensile layer for fabrication using the stress memorization technique to enhance NMOS mobility. The mechanism that we have proposed implies that the conventional choice of the capping layer should be modulated from the point of view of stress shift rather than using the highest tensile film. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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