Deposition of microcrystalline silicon by electron beam excited plasma

Autor:	Makoto Ryoji, Toshiaki Sasaki, Masakuni Tohkai, Yukimi Ichikawa
Rok vydání:	1997
Předmět:	Materials science Renewable Energy Sustainability and the Environment Microcrystalline silicon Excited state Cathode ray Analytical chemistry Plasma Deposition (chemistry) Grain size Surfaces Coatings and Films Electronic Optical and Magnetic Materials Volumetric flow rate Dilution
Zdroj:	Solar Energy Materials and Solar Cells. 49:81-88
ISSN:	0927-0248
Popis:	Hydrogenated microcrystalline silicon (μc-Si:H) films were deposited by electron beam excited plasma (EBEP) CVD. As the SiH4 flow rate increases, deposition rate steeply increases, however, crystalline fraction and grain size decrease. A high deposition rate of 69 nm/min is achieved using SiH4 without H2 dilution. It is shown that H atom plays key roll for μc-Si:H formation. Results show that deposition mechanism of μc-Si:H by EBEP is mainly controlled by the reaction in the plasma rather than the reaction on the film surface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7edaa8b75d1a205a656f63e93d2e4a43 https://doi.org/10.1016/s0927-0248(97)00179-7 Zobrazit plný text záznamu Full Text from ScienceDirect