An Al/sub 0.3/Ga/sub 0.7/N/GaN undoped channel heterostructure field effect transistor with F/sub max/ of 107 GHz

Autor:	Kang L. Wang, R. Li, Joan M. Redwing, R.P. Smith, Yihang Chen, S. J. Cai, K. S. Boutros, L. Wong, S. C. Martin
Rok vydání:	1999
Předmět:	Materials science business.industry Transconductance Contact resistance Doping Wide-bandgap semiconductor Heterojunction Electronic Optical and Magnetic Materials Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Ohmic contact Current density
Zdroj:	IEEE Electron Device Letters. 20:323-325
ISSN:	1558-0563 0741-3106
DOI:	10.1109/55.772364
Popis:	An Al/sub 0.3/Ga/sub 0.7/N/GaN heterostructure field effect transistor (HFET) grown on semi-insulating SiC with an 0.2-/spl mu/m gate length is reported. A source-drain ohmic contact resistance of 0.15-/spl Omega/-mm was achieved through the use of high Al content and high n-type doping (1E19 cm/sup -3/) in the AlGaN donor layer and optimized metallization procedures. We obtained a maximum transconductance of 260 mS/mm, a saturated current density of 1.2 A/mm, and a maximum oscillation frequency in excess of 107 GHz in the devices. The results are one of the best achieved up to now, and they will open up the potential for the applications of AlGaN/GaN HFET's in high-power microwave radar, remote sensing, and communications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7eda9ac13e7a50ff9923b49cd23d4938 https://doi.org/10.1109/55.772364 Zobrazit plný text záznamu