| Popis: |
This paper focus on the static and dynamic modeling of SiC MOSFET power module with laminated busbar completion and its loss prediction method. Firstly, a general static model of SiC MOSFET is proposed to accurately reproduce transfer and output characteristics under different temperatures. By applying more degrees of freedom in the channel current expression, removing the drift resistance and rectifying temperature dependent parameters, the proposed static model shows better fitness and convergence simultaneously. Then, an analytical dynamic model is proposed, which involves the nonlinear junction capacitance and dynamic transconductance of the device as well as the stray parameters of busbar and module packaging. Finally, based on the verifted static and dynamic model, prediction of device total loss and junction with extracted real thermal RC network is also presented |
