Autor: |
Jong Hyun Choi, Yeon-Gon Mo, Jae Kyeong Jeong, Jun-Bock Jang, Jun Hyuk Cheon, Hyun Soo Shin, Ji Ho Hur, Ho Kyoon Chung |
Rok vydání: |
2006 |
Předmět: |
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Zdroj: |
IEEE Transactions on Electron Devices. 53:1273-1276 |
ISSN: |
0018-9383 |
Popis: |
This brief reports a flexible active-matrix organic light-emitting diode display based on a poly-Si thin-film transistor (TFT) backplane. The p-channel poly-Si TFTs on metal foil exhibited a maximum field-effect mobility of 86.1 cm/sup 2//Vs, threshold voltage of 3.5 V, gate voltage swing of 0.8 V/dec, and the minimum off current of 10/sup -12/ A//spl mu/m at V/sub ds/=-0.1 V. A 4.1-in active-matrix backplane was fabricated with the poly-Si TFT with a conventional pixel circuit consisting of 2 TFTs and one capacitor. The scan driver circuits with PMOS were integrated on the flexible metal foil. The top emission, organic light emitting display having a brightness of 100 cd/m/sup 2/. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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