Characterization of Enhanced Perimeter Leakage in MOS Structures Following Ion Implantation
| Autor: | M. G. Stinson, C. M. Osburn |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
Materials science
Renewable Energy Sustainability and the Environment business.industry Electrical engineering chemistry.chemical_element Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ion implantation chemistry Materials Chemistry Electrochemistry Optoelectronics business Arsenic Leakage (electronics) |
| Zdroj: | Journal of The Electrochemical Society. 137:1564-1572 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2086728 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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