| Autor: |
Hendrik Ravener, Thomas Stiasny, Munaf Rahimo, Tobias Wikstrom, Martin Arnold, Christoph Waltisberg |
| Rok vydání: |
2014 |
| Předmět: |
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| Zdroj: |
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD). |
| Popis: |
A 4500V RC-IGCT switching more than 10 kA in both switch and diode mode was developed for application in cascaded multilevel topologies. The performance was facilitated by using most of a 150 mm silicon wafer for a single device. Furthermore, the stray inductance of the gate bushing inductance was lowered an order of magnitude, and the use of an outer ring gate contributed significantly to lower impedance on the device itself. Adjustment of the di/dt choke led to significant reduction of total losses. FCE as a means of loss optimization was investigated. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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